N-channel and P-channel MOSFET with a 30V drain-source breakdown voltage and 5A continuous drain current. Features a low 50mΩ maximum drain-source on-resistance and 20A pulsed drain current capability. This surface-mount component is housed in an 8-pin small outline plastic package with gull-wing terminals and a tin finish. Designed for switching applications, it operates up to 150°C and offers a 2.5mJ avalanche energy rating.
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Technical Specifications
Renesas UPA2791GR-E1-AT technical specifications.
General
Avalanche Energy Rating (Eas)
2.5mJ
Drain Current-Max (Abs) (ID)
5A
Drain Current-Max (ID)
5A
Drain-source On Resistance-Max
50mR
DS Breakdown Voltage-Min
30V
FET Technology
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PDSO-G8
JESD-609 Code
e3
Max Operating Temperature
150°C
Number of Elements
1
Package Body Material
Plastic
Package Shape
Rectangular
Package Style
SMALL OUTLINEMeter
Polarity/Channel Type
N-CHANNEL, P-CHANNEL
Power Dissipation-Max (Abs)
2W
Pulsed Drain Current-Max (IDM)
20A
Qualification Status
Not Qualified
RoHS Compliant
Yes
Surface Mount
Yes
Terminal Finish
Tin
Terminal Form
Gull Wing
Terminal Position
DUAL
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Compliance
RoHS
Compliant
Datasheet
Renesas UPA2791GR-E1-AT Datasheet
Download the complete datasheet for Renesas UPA2791GR-E1-AT to view detailed technical specifications.
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