N-channel and P-channel MOSFET with a 30V drain-source breakdown voltage and 5A continuous drain current. Features a low 50mΩ maximum drain-source on-resistance and 20A pulsed drain current capability. This surface-mount component is housed in an 8-pin small outline plastic package with gull-wing terminals and a tin finish. Designed for switching applications, it operates up to 150°C and offers a 2.5mJ avalanche energy rating.
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Technical Specifications
Renesas UPA2791GR-E1-AT technical specifications.
General
| Avalanche Energy Rating (Eas) | 2.5mJ |
| Drain Current-Max (Abs) (ID) | 5A |
| Drain Current-Max (ID) | 5A |
| Drain-source On Resistance-Max | 50mR |
| DS Breakdown Voltage-Min | 30V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 Code | R-PDSO-G8 |
| JESD-609 Code | e3 |
| Max Operating Temperature | 150°C |
| Number of Elements | 1 |
| Package Body Material | Plastic |
| Package Shape | Rectangular |
| Package Style | SMALL OUTLINEMeter |
| Polarity/Channel Type | N-CHANNEL, P-CHANNEL |
| Power Dissipation-Max (Abs) | 2W |
| Pulsed Drain Current-Max (IDM) | 20A |
| Qualification Status | Not Qualified |
| RoHS Compliant | Yes |
| Surface Mount | Yes |
| Terminal Finish | Tin |
| Terminal Form | Gull Wing |
| Terminal Position | DUAL |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
Compliance
| RoHS | Compliant |
Datasheet
Renesas UPA2791GR-E1-AT Datasheet
Download the complete datasheet for Renesas UPA2791GR-E1-AT to view detailed technical specifications.
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