P-channel Power MOSFET, 30V drain-source voltage, 30A continuous drain current. Features 4.8mOhm maximum drain-source resistance at 10V, 100nC typical gate charge, and 3740pF typical input capacitance. Housed in an 8-pin HVSON surface-mount package with a 3.3mm x 3mm footprint. Operates across a -55°C to 150°C temperature range.
PackageHVSON
MountingSurface Mount
Quick Jump:
Technical Specifications
Renesas uPA2812T1L-E2-AT technical specifications.
General
| Package Family Name | SON |
| Package/Case | HVSON |
| Pin Count | 8 |
| PCB | 8 |
| Package Length (mm) | 3.3 |
| Package Width (mm) | 3 |
| Package Height (mm) | 0.9 |
| Seated Plane Height (mm) | 0.9 |
| Pin Pitch (mm) | 0.65 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Configuration | Single Quad Drain Triple Source |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | P |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 30V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 30A |
| Maximum Drain Source Resistance | 4.8@10VmOhm |
| Typical Gate Charge @ Vgs | 100@10VnC |
| Typical Gate Charge @ 10V | 100nC |
| Typical Input Capacitance @ Vds | 3740@10VpF |
| Maximum Power Dissipation | 1500mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | SAN34 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Renesas uPA2812T1L-E2-AT Datasheet
Download the complete datasheet for Renesas uPA2812T1L-E2-AT to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.