P-channel Power MOSFET, 30V drain-source voltage, 30A continuous drain current. Features 4.8mOhm maximum drain-source resistance at 10V, 100nC typical gate charge, and 3740pF typical input capacitance. Housed in an 8-pin HVSON surface-mount package with a 3.3mm x 3mm footprint. Operates across a -55°C to 150°C temperature range.
PackageHVSON
MountingSurface Mount
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Technical Specifications
Renesas uPA2812T1L-E2-AT technical specifications.
General
Package Family Name
SON
Package/Case
HVSON
Pin Count
8
PCB
8
Package Length (mm)
3.3
Package Width (mm)
3
Package Height (mm)
0.9
Seated Plane Height (mm)
0.9
Pin Pitch (mm)
0.65
Package Material
Plastic
Mounting
Surface Mount
Configuration
Single Quad Drain Triple Source
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
P
Number of Elements per Chip
1
Maximum Drain Source Voltage
30V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
30A
Maximum Drain Source Resistance
4.8@10VmOhm
Typical Gate Charge @ Vgs
100@10VnC
Typical Gate Charge @ 10V
100nC
Typical Input Capacitance @ Vds
3740@10VpF
Maximum Power Dissipation
1500mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
SAN34
EU RoHS
Yes
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Renesas uPA2812T1L-E2-AT Datasheet
Download the complete datasheet for Renesas uPA2812T1L-E2-AT to view detailed technical specifications.
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