P-channel Power MOSFET, 30V Drain-Source Voltage, 27A Continuous Drain Current. Features a 8-pin HVSON surface-mount package with 3.3mm x 3mm x 0.9mm dimensions and 0.65mm pin pitch. Offers 6.2 mOhm maximum Drain-Source On-Resistance at 10V Vgs and 80 nC typical Gate Charge. Operates across a -55°C to 150°C temperature range.
PackageHVSON
MountingSurface Mount
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Technical Specifications
Renesas uPA2813T1L-E2-AT technical specifications.
General
Package Family Name
SON
Package/Case
HVSON
Pin Count
8
PCB
8
Package Length (mm)
3.3
Package Width (mm)
3
Package Height (mm)
0.9
Seated Plane Height (mm)
0.9
Pin Pitch (mm)
0.65
Package Material
Plastic
Mounting
Surface Mount
Configuration
Single Quad Drain Triple Source
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
P
Number of Elements per Chip
1
Maximum Drain Source Voltage
30V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
27A
Maximum Drain Source Resistance
6.2@10VmOhm
Typical Gate Charge @ Vgs
80@10VnC
Typical Gate Charge @ 10V
80nC
Typical Input Capacitance @ Vds
3130@10VpF
Maximum Power Dissipation
1500mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
SAN34
EU RoHS
Yes
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Renesas uPA2813T1L-E2-AT Datasheet
Download the complete datasheet for Renesas uPA2813T1L-E2-AT to view detailed technical specifications.
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