8-pin HWSON package P-channel enhancement mode Power MOSFET, featuring a 30V drain-source voltage and 24A continuous drain current. This single element transistor offers a low 7.8mOhm drain-source resistance at 10V Vgs, with a typical gate charge of 74nC and input capacitance of 2800pF. Designed for surface mounting, it operates within a -55°C to 150°C temperature range and has a maximum power dissipation of 1500mW.
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| Package/Case | HWSON |
| Pin Count | 8 |
| PCB | 8 |
| Package Length (mm) | 3.1 |
| Package Width (mm) | 3(Min) |
| Package Height (mm) | 0.8(Max) |
| Seated Plane Height (mm) | 0.8(Max) |
| Pin Pitch (mm) | 0.65 |
| Mounting | Surface Mount |
| Configuration | Single Quad Drain Triple Source |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | P |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 30V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 24A |
| Maximum Drain Source Resistance | 7.8@10VmOhm |
| Typical Gate Charge @ Vgs | 74@10VnC |
| Typical Gate Charge @ 10V | 74nC |
| Typical Input Capacitance @ Vds | 2800@10VpF |
| Maximum Power Dissipation | 1500mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Cage Code | SAN34 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| RoHS Versions | 2011/65/EU |
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