8-pin P-channel enhancement mode Power MOSFET in a surface-mount HWSON package. Features a maximum drain-source voltage of 30V and a continuous drain current of 21A. Offers a low drain-source on-resistance of 11mΩ at 10V. Operates across a temperature range of -55°C to 150°C.
PackageHWSON
MountingSurface Mount
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Technical Specifications
Renesas uPA2815T1S-E2-AT technical specifications.
General
Package/Case
HWSON
Pin Count
8
PCB
8
Package Length (mm)
3.1
Package Width (mm)
3(Min)
Package Height (mm)
0.8(Max)
Seated Plane Height (mm)
0.8(Max)
Pin Pitch (mm)
0.65
Mounting
Surface Mount
Configuration
Single Quad Drain Triple Source
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
P
Number of Elements per Chip
1
Maximum Drain Source Voltage
30V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
21A
Maximum Drain Source Resistance
11@10VmOhm
Typical Gate Charge @ Vgs
47@10VnC
Typical Gate Charge @ 10V
47nC
Typical Input Capacitance @ Vds
1760@10VpF
Maximum Power Dissipation
1500mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
SAN34
EU RoHS
Yes
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Renesas uPA2815T1S-E2-AT Datasheet
Download the complete datasheet for Renesas uPA2815T1S-E2-AT to view detailed technical specifications.
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