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Technical Specifications
Renesas UPA2816T1S-E2-AT technical specifications.
General
| Channel Type | Unidirectional |
| Drain Current-Max (Abs) (ID) | 17A |
| Drain Current-Max (ID) | 17A |
| Drain-source On Resistance-Max | 15.5mR |
| DS Breakdown Voltage-Min | 30V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Height | 800um |
| Length | 3mm |
| Max Operating Temperature | 150°C |
| Number of Elements | 1 |
| Polarity/Channel Type | P-CHANNEL |
| Power Dissipation-Max (Abs) | 12W |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Surface Mount | Yes |
| Width | 3mm |
Compliance
| RoHS | Compliant |
Datasheet
Renesas UPA2816T1S-E2-AT Datasheet
Download the complete datasheet for Renesas UPA2816T1S-E2-AT to view detailed technical specifications.
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