P-channel Power MOSFET, 30V drain-source voltage, 17A continuous drain current. Features 8-pin HWSON surface mount package with 0.65mm pin pitch. Offers 15.5 mOhm drain-source resistance at 10V gate-source voltage and 33.4 nC typical gate charge. Maximum power dissipation is 1500 mW, operating temperature range from -55°C to 150°C.
PackageHWSON
MountingSurface Mount
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Technical Specifications
Renesas uPA2816T1S-E2-AT technical specifications.
General
Package/Case
HWSON
Pin Count
8
PCB
8
Package Length (mm)
3.1
Package Width (mm)
3(Min)
Package Height (mm)
0.8(Max)
Seated Plane Height (mm)
0.8(Max)
Pin Pitch (mm)
0.65
Mounting
Surface Mount
Configuration
Single Quad Drain Triple Source
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
P
Number of Elements per Chip
1
Maximum Drain Source Voltage
30V
Maximum Gate Source Voltage
20V
Maximum Continuous Drain Current
17A
Maximum Drain Source Resistance
15.5@10VmOhm
Typical Gate Charge @ Vgs
33.4@10VnC
Typical Gate Charge @ 10V
33.4nC
Typical Input Capacitance @ Vds
1160@10VpF
Maximum Power Dissipation
1500mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
SAN34
EU RoHS
Yes
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
RoHS Versions
2011/65/EU
Datasheet
Renesas uPA2816T1S-E2-AT Datasheet
Download the complete datasheet for Renesas uPA2816T1S-E2-AT to view detailed technical specifications.
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