N-channel enhancement mode power MOSFET featuring a 30V drain-source voltage and 22A continuous drain current. This single MOSFET is housed in an 8-pin HWSON package with a 0.65mm pin pitch, measuring 3.1mm x 3mm x 0.8mm. Key electrical characteristics include a maximum drain-source on-resistance of 5.3 mOhm at 10V, typical gate charge of 50nC at 10V, and input capacitance of 2330pF at 10V. Operating across a temperature range of -55°C to 150°C, this surface-mount component offers a maximum power dissipation of 1500mW.
PackageHWSON
MountingSurface Mount
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Technical Specifications
Renesas uPA2820T1S-E2-AT technical specifications.
General
Package/Case
HWSON
Pin Count
8
PCB
8
Package Length (mm)
3.1
Package Width (mm)
3(Min)
Package Height (mm)
0.8(Max)
Seated Plane Height (mm)
0.8(Max)
Pin Pitch (mm)
0.65
Mounting
Surface Mount
Configuration
Single Quad Drain Triple Source
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain Source Voltage
30V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
22A
Maximum Drain Source Resistance
5.3@10VmOhm
Typical Gate Charge @ Vgs
50@10V|32@5VnC
Typical Gate Charge @ 10V
50nC
Typical Input Capacitance @ Vds
2330@10VpF
Maximum Power Dissipation
1500mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
SAN34
EU RoHS
Yes
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Renesas uPA2820T1S-E2-AT Datasheet
Download the complete datasheet for Renesas uPA2820T1S-E2-AT to view detailed technical specifications.
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