N-channel enhancement mode Power MOSFET, 30V drain-source voltage, 24A continuous drain current. Features 4.6mOhm maximum drain-source resistance at 10V gate-source voltage. Surface mountable in an 8-pin HWSON package with a 0.65mm pin pitch. Single Quad Drain Triple Source configuration. Operating temperature range from -55°C to 150°C.
PackageHWSON
MountingSurface Mount
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Technical Specifications
Renesas uPA2825T1S-E2-AT technical specifications.
General
| Package/Case | HWSON |
| Pin Count | 8 |
| PCB | 8 |
| Package Length (mm) | 3.1 |
| Package Width (mm) | 3(Min) |
| Package Height (mm) | 0.8(Max) |
| Seated Plane Height (mm) | 0.8(Max) |
| Pin Pitch (mm) | 0.65 |
| Mounting | Surface Mount |
| Configuration | Single Quad Drain Triple Source |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 30V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 24A |
| Maximum Drain Source Resistance | 4.6@10VmOhm |
| Typical Gate Charge @ Vgs | 57@10V|35@5VnC |
| Typical Gate Charge @ 10V | 57nC |
| Typical Input Capacitance @ Vds | 2600@10VpF |
| Maximum Power Dissipation | 1500mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | SAN34 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| RoHS Versions | 2011/65/EU |
Datasheet
Renesas uPA2825T1S-E2-AT Datasheet
Download the complete datasheet for Renesas uPA2825T1S-E2-AT to view detailed technical specifications.
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