N-channel enhancement mode Power MOSFET, 30V drain-source voltage, 24A continuous drain current. Features 4.6mOhm maximum drain-source resistance at 10V gate-source voltage. Surface mountable in an 8-pin HWSON package with a 0.65mm pin pitch. Single Quad Drain Triple Source configuration. Operating temperature range from -55°C to 150°C.
PackageHWSON
MountingSurface Mount
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Technical Specifications
Renesas uPA2825T1S-E2-AT technical specifications.
General
Package/Case
HWSON
Pin Count
8
PCB
8
Package Length (mm)
3.1
Package Width (mm)
3(Min)
Package Height (mm)
0.8(Max)
Seated Plane Height (mm)
0.8(Max)
Pin Pitch (mm)
0.65
Mounting
Surface Mount
Configuration
Single Quad Drain Triple Source
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain Source Voltage
30V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
24A
Maximum Drain Source Resistance
4.6@10VmOhm
Typical Gate Charge @ Vgs
57@10V|35@5VnC
Typical Gate Charge @ 10V
57nC
Typical Input Capacitance @ Vds
2600@10VpF
Maximum Power Dissipation
1500mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
SAN34
EU RoHS
Yes
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
RoHS Versions
2011/65/EU
Datasheet
Renesas uPA2825T1S-E2-AT Datasheet
Download the complete datasheet for Renesas uPA2825T1S-E2-AT to view detailed technical specifications.
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