The UPA602T-T2-A is a N-CHANNEL junction field-effect transistor with a maximum operating temperature of 150°C. It features a maximum drain current of 100mA and a maximum power dissipation of 300mW. The device is RoHS compliant and suitable for surface mount applications. The transistor is constructed using metal-oxide semiconductor technology and is compliant with JESD-609 code e6.
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Renesas UPA602T-T2-A technical specifications.
| Drain Current-Max (Abs) (ID) | 100mA |
| Drain Current-Max (ID) | 100mA |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-609 Code | e6 |
| Max Operating Temperature | 150°C |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 300mW |
| RoHS Compliant | Yes |
| Surface Mount | Yes |
| Terminal Finish | Tin |
| RoHS | Compliant |
No datasheet is available for this part.
