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Technical Specifications
Renesas UPA606T-T1-A technical specifications.
General
| Drain Current-Max (Abs) (ID) | 100mA |
| Drain Current-Max (ID) | 100mA |
| Drain-source On Resistance-Max | 30R |
| DS Breakdown Voltage-Min | 50V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 Code | R-PDSO-G6 |
| JESD-609 Code | e6 |
| Max Operating Temperature | 150°C |
| Number of Elements | 2 |
| Package Body Material | Plastic |
| Package Shape | Rectangular |
| Package Style | SMALL OUTLINEMeter |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 300W |
| RoHS Compliant | Yes |
| Surface Mount | Yes |
| Terminal Finish | Tin |
| Terminal Form | Gull Wing |
| Terminal Position | DUAL |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
Compliance
| RoHS | Compliant |
Datasheet
Renesas UPA606T-T1-A Datasheet
Download the complete datasheet for Renesas UPA606T-T1-A to view detailed technical specifications.
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