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Technical Specifications
Renesas UPA606T-T1-A technical specifications.
General
Drain Current-Max (Abs) (ID)
100mA
Drain Current-Max (ID)
100mA
Drain-source On Resistance-Max
30R
DS Breakdown Voltage-Min
50V
FET Technology
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PDSO-G6
JESD-609 Code
e6
Max Operating Temperature
150°C
Number of Elements
2
Package Body Material
Plastic
Package Shape
Rectangular
Package Style
SMALL OUTLINEMeter
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
300W
RoHS Compliant
Yes
Surface Mount
Yes
Terminal Finish
Tin
Terminal Form
Gull Wing
Terminal Position
DUAL
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Compliance
RoHS
Compliant
Datasheet
Renesas UPA606T-T1-A Datasheet
Download the complete datasheet for Renesas UPA606T-T1-A to view detailed technical specifications.
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