The UPA672T-T1-A is a metal-oxide semiconductor N-channel MOSFET with a maximum drain current of 100mA and maximum power dissipation of 200mW. It operates within a temperature range of -40°C to 150°C and is compliant with RoHS regulations. This surface-mount device features a tin terminal finish and is suitable for use in various electronic applications.
Sign in to ask questions about the Renesas UPA672T-T1-A datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Renesas UPA672T-T1-A technical specifications.
| Drain Current-Max (Abs) (ID) | 100mA |
| Drain Current-Max (ID) | 100mA |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-609 Code | e6 |
| Max Operating Temperature | 150°C |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 200mW |
| RoHS Compliant | Yes |
| Surface Mount | Yes |
| Terminal Finish | Tin |
| RoHS | Compliant |
Download the complete datasheet for Renesas UPA672T-T1-A to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
