This N-channel junction field-effect transistor features a maximum drain current of 100mA and a maximum power dissipation of 200mW. It operates within a temperature range of -55°C to 150°C and is designed for surface mount applications. The device is compliant with RoHS regulations and is manufactured by Renesas.
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Technical Specifications
Renesas UPA675T-T1-A technical specifications.
General
| Drain Current-Max (Abs) (ID) | 100mA |
| Drain Current-Max (ID) | 100mA |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-609 Code | e6 |
| Max Operating Temperature | 150°C |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 200mW |
| RoHS Compliant | Yes |
| Surface Mount | Yes |
| Terminal Finish | Tin |
Compliance
| RoHS | Compliant |
Datasheet
Renesas UPA675T-T1-A Datasheet
Download the complete datasheet for Renesas UPA675T-T1-A to view detailed technical specifications.
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