The UPA677TB-T2-A is a 2 N-Channel MOSFET with a drain to source breakdown voltage of 20V and a continuous drain current of 350mA. It has a maximum power dissipation of 200mW and a drain to source resistance of 570mR. The device is packaged in a surface mount SC package and is suitable for use in a variety of applications. The operating temperature range is not specified, and compliance information is not provided.
PackageSC
MountingSurface Mount
Power200mW
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Technical Specifications
Renesas UPA677TB-T2-A technical specifications.
General
| Package/Case | SC |
| Continuous Drain Current (ID) | 350mA |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 570mR |
| Drain to Source Voltage (Vdss) | 20V |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 12V |
| Input Capacitance | 28pF |
| Max Power Dissipation | 200mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Power Dissipation | 200mW |
| Rds On Max | 570mR |
Compliance
| RoHS | Compliant |
Datasheet
Renesas UPA677TB-T2-A Datasheet
Download the complete datasheet for Renesas UPA677TB-T2-A to view detailed technical specifications.
No datasheet is available for this part.