High-speed 512K x 36 CMOS SRAM with 0.45ns maximum access time and 200MHz maximum clock frequency. This parallel interface memory features separate I/O and a 3-state output characteristic. Packaged in a 165-ball plastic BGA with a 1mm terminal pitch, it operates from a 1.8V supply voltage.
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Technical Specifications
Renesas UPD44165364AF5-E50-EQ2 technical specifications.
General
Access Time-Max
0.45ns
Clock Frequency-Max (fCLK)
200MHz
Density
18874368b
I/O Type
SEPARATE
JESD-30 Code
R-PBGA-B165
Max Supply Current
580mA
Memory Type
SRAM,
Memory Width
36
Number of Words
524288
Number of Words Code
512K
Organization
512KX36
Output Characteristics
3-STATE
Package Body Material
Plastic
Package Code
BGA
Package Equivalence Code
BGA165,11X15,40
Package Shape
Rectangular
Package Style
GRID ARRAYMeter
Parallel/Serial
PARALLEL
Power Supplies
1.8V
Qualification Status
Not Qualified
RoHS Compliant
No
Standby Current-Max
260mA
Standby Voltage-Min
1.7V
Supply Voltage-Nom (Vsup)
1.8V
Surface Mount
Yes
Technology
CMOS
Terminal Form
Ball
Terminal Pitch
1mm
Terminal Position
BOTTOM
Compliance
RoHS
Not Compliant
Datasheet
Renesas UPD44165364AF5-E50-EQ2 Datasheet
Download the complete datasheet for Renesas UPD44165364AF5-E50-EQ2 to view detailed technical specifications.
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