1MX36 QDR SRAM, featuring a 0.45ns maximum access time and 250MHz maximum clock frequency. This parallel memory component offers a density of 37,748,736 bits with a 1MX36 organization. It operates with separate I/O and 3-state output characteristics, utilizing CMOS technology. The device is housed in a 165-ball plastic BGA package with a 1mm terminal pitch, measuring 15mm x 17mm and a maximum seated height of 1.46mm. Power is supplied via 1.5/1.8, 1.8V, with a nominal supply voltage of 1.8V. Operating temperature ranges from 0°C to 70°C.
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Technical Specifications
Renesas UPD44325362BF5-E40-FQ1 technical specifications.
General
Access Time-Max
0.45ns
Clock Frequency-Max (fCLK)
250MHz
Density
37748736b
Height - Seated (Max)
1.46mm
I/O Type
SEPARATE
JESD-30 Code
R-PBGA-B165
Length
17mm
Max Operating Temperature
70°C
Max Supply Current
690mA
Memory Type
QDR SRAM
Memory Width
36
Min Operating Temperature
0°C
Number of Functions
1
Number of Words
1048576
Number of Words Code
1M
Organization
1MX36
Output Characteristics
3-STATE
Package Body Material
Plastic
Package Code
LBGA
Package Equivalence Code
BGA165,11X15,40
Package Shape
Rectangular
Package Style
GRID ARRAY, LOW PROFILEMeter
Parallel/Serial
PARALLEL
Power Supplies
1.5/1.8,1.8V
Qualification Status
Not Qualified
RoHS Compliant
No
Standby Current-Max
330mA
Standby Voltage-Min
1.7V
Supply Voltage-Max (Vsup)
1.9V
Supply Voltage-Min (Vsup)
1.7V
Supply Voltage-Nom (Vsup)
1.8V
Surface Mount
Yes
Technology
CMOS
Temperature Grade
COMMERCIAL
Terminal Form
Ball
Terminal Pitch
1mm
Terminal Position
BOTTOM
Width
15mm
Compliance
RoHS
Not Compliant
Datasheet
Renesas UPD44325362BF5-E40-FQ1 Datasheet
Download the complete datasheet for Renesas UPD44325362BF5-E40-FQ1 to view detailed technical specifications.
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