RF Micro Devices
FPD1500
RF Power Field-Effect Transistor, 1-Element, X Band, Silicon, N-Channel, High Electron Mobility FET, DIE
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Technical Specifications
RF Micro Devices FPD1500 technical specifications.
General
Max Operating Temperature
175
Terminal Position
UPPER
Number of Elements
1
Compliance
Eccn Code
EAR99
REACH
unknown
Military Spec
False
Datasheet
RF Micro Devices FPD1500 Datasheet
Download the complete datasheet for RF Micro Devices FPD1500 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.