RF Power Field-Effect Transistor, 1-Element, X Band, Silicon, N-Channel, High Electron Mobility FET, DIE
RF Micro Devices FPD1500 technical specifications.
| Max Operating Temperature | 175 |
| Terminal Position | UPPER |
| Number of Elements | 1 |
| Eccn Code | EAR99 |
| REACH | unknown |
| Military Spec | False |
No datasheet is available for this part.
