RF Micro Devices
FPD1500SOT89
RF Power Field-Effect Transistor, 1-Element, Silicon, N-Channel, High Electron Mobility FET, SOT-89, 3 PIN
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Technical Specifications
RF Micro Devices FPD1500SOT89 technical specifications.
General
Max Operating Temperature
150
Number of Terminals
3
Terminal Position
SINGLE
Pin Count
3
Number of Elements
1
Compliance
RoHS
No
Eccn Code
EAR99
Lead Free
No
REACH
Compliant
Military Spec
False
Datasheet
RF Micro Devices FPD1500SOT89 Datasheet
Download the complete datasheet for RF Micro Devices FPD1500SOT89 to view detailed technical specifications.
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