RF Power Field-Effect Transistor, 1-Element, Silicon, N-Channel, High Electron Mobility FET, SOT-89, 3 PIN
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| Max Operating Temperature | 150 |
| Number of Terminals | 3 |
| Terminal Position | SINGLE |
| Pin Count | 3 |
| Number of Elements | 1 |
| RoHS | No |
| Eccn Code | EAR99 |
| Lead Free | No |
| REACH | Compliant |
| Military Spec | False |
