RF Micro Devices
FPD1500SOT89CE
RF Power Field-Effect Transistor, 1-Element, Silicon, N-Channel, High Electron Mobility FET, ROHS COMPLIANT PACKAGE-3
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Technical Specifications
RF Micro Devices FPD1500SOT89CE technical specifications.
General
Max Operating Temperature
150
Number of Terminals
3
Terminal Position
SINGLE
Pin Count
3
Number of Elements
1
Compliance
RoHS
Yes
Eccn Code
5A991.G
HTS Code
8541.21.00.40
REACH
unknown
Military Spec
False
Datasheet
RF Micro Devices FPD1500SOT89CE Datasheet
Download the complete datasheet for RF Micro Devices FPD1500SOT89CE to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.