The BCW32LT1G is a surface-mount NPN bipolar junction transistor with a collector-emitter breakdown voltage of 32V and a current rating of 100mA. It has a power dissipation of 300mW and is packaged in a lead-free SOT-23-3 package. The transistor is compliant with Reach SVHC regulations and is available in cut tape packaging.
PackageSOT-23-3
Current Rating100mA
PolarityNPN
Power300mW
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Technical Specifications
Rochester Electronics BCW32LT1G technical specifications.
General
| Package/Case | SOT-23-3 |
| Collector Emitter Breakdown Voltage | 32V |
| Current Rating | 100mA |
| Lead Free | Lead Free |
| Packaging | Cut Tape |
| Polarity | NPN |
| Power Dissipation | 300mW |
| Reach SVHC Compliant | Yes |
| DC Rated Voltage | 32V |
Compliance
| RoHS | Not Compliant |
Datasheet
Rochester Electronics BCW32LT1G Datasheet
Download the complete datasheet for Rochester Electronics BCW32LT1G to view detailed technical specifications.
No datasheet is available for this part.