Rochester Electronics
CY7C1312BV18-200BZXC
Commercial Grade QDR SRAM, 1.7-1.9V, 1048576 Words, 0.45ns Access Time, 165-Pin R-PBGA-B165
The CY7C1312BV18-200BZXC is a commercial grade QDR SRAM memory IC with a supply voltage range of 1.7 to 1.9V. It has a maximum access time of 0.45ns and a capacity of 1048576 words. The device is packaged in a 165-pin R-PBGA-B165 package, measuring 13 x 15mm with a height of 1.40mm. It is compliant with lead-free standards and is suitable for use in commercial temperature environments ranging from 0 to 70°C.
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Technical Specifications
Rochester Electronics CY7C1312BV18-200BZXC technical specifications.
General
| Max Operating Temperature | 70 |
| Number of Terminals | 165 |
| Min Operating Temperature | 0 |
| Terminal Position | BOTTOM |
| JEDEC Package Code | R-PBGA-B165 |
| Width | 13 |
| Length | 15 |
| Pin Count | 165 |
| Number of Functions | 1 |
| Temperature Grade | COMMERCIAL |
| Supply Voltage-Nom (Vsup) | 1.8 |
| Supply Voltage-Max (Vsup) | 1.9 |
| Supply Voltage-Min (Vsup) | 1.7 |
| Number of Words | 1048576 |
| Number of Words Code | 1000000 |
| Memory IC Type | QDR SRAM |
| Parallel/Serial | PARALLEL |
| Access Time-Max | 0.45 |
Compliance
| RoHS | Yes |
| Lead Free | Yes |
| REACH | unknown |
| Military Spec | False |
Datasheet
Rochester Electronics CY7C1312BV18-200BZXC Datasheet
Download the complete datasheet for Rochester Electronics CY7C1312BV18-200BZXC to view detailed technical specifications.
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