N-Channel PowerTrench® MOSFET featuring 100V drain-to-source breakdown voltage and 80A continuous drain current. Offers low on-resistance of 7.5mΩ at Vgs=10V. Designed for high power applications with a 310W power dissipation rating and TO-263 package. Supports a gate-to-source voltage of 20V and includes lead-free and REACH SVHC compliance.
PackageTO-263
Current Rating44A
Power310W
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Technical Specifications
Rochester Electronics FDB3632 technical specifications.
General
| Package/Case | TO-263 |
| Continuous Drain Current (ID) | 80A |
| Current Rating | 44A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 7.5mR |
| Drain to Source Voltage (Vdss) | 100V |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 6nF |
| Lead Free | Lead Free |
| Packaging | Bulk |
| Power Dissipation | 310W |
| Reach SVHC Compliant | Yes |
| DC Rated Voltage | 100V |
Compliance
| RoHS | Not Compliant |
Datasheet
Rochester Electronics FDB3632 Datasheet
Download the complete datasheet for Rochester Electronics FDB3632 to view detailed technical specifications.
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