The FDD5690 is a 60V N-Channel MOSFET with a continuous drain current of 9A and a current rating of 30A. It features a drain to source breakdown voltage of 60V and a drain to source resistance of 23mR. The device is packaged in a TO-252 case and is lead free. It is rated for a power dissipation of 50W and is compliant with Reach SVHC regulations.
PackageTO-252
Current Rating30A
Power50W
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Technical Specifications
Rochester Electronics FDD5690 technical specifications.
General
| Package/Case | TO-252 |
| Continuous Drain Current (ID) | 9A |
| Current Rating | 30A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 23mR |
| Drain to Source Voltage (Vdss) | 60V |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.11nF |
| Lead Free | Lead Free |
| Packaging | Cut Tape |
| Power Dissipation | 50W |
| Reach SVHC Compliant | Yes |
| DC Rated Voltage | 60V |
Compliance
| RoHS | Not Compliant |
Datasheet
Rochester Electronics FDD5690 Datasheet
Download the complete datasheet for Rochester Electronics FDD5690 to view detailed technical specifications.
No datasheet is available for this part.