The FDN358P is a N-Channel Junction Field-Effect Transistor with a continuous drain current of 1.5A and a drain to source breakdown voltage of -30V. It features a drain to source resistance of 125mR and a power dissipation of 560mW. The device is packaged in a SUPERSOT-3 package and is lead free. It is suitable for use in a variety of applications where a low-power JFET is required.
Checking distributor stock and pricing after the page loads.
| Package/Case | 125 |
| Continuous Drain Current (ID) | 1.5A |
| Current Rating | -1.5A |
| Drain to Source Breakdown Voltage | -30V |
| Drain to Source Resistance | 125mR |
| Drain to Source Voltage (Vdss) | -30V |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 182pF |
| Lead Free | Lead Free |
| Packaging | Bulk |
| Power Dissipation | 560mW |
| DC Rated Voltage | -30V |
| RoHS | Not Compliant |
