The FDP6670AL is a TO-220 packaged N-channel MOSFET with a continuous drain current rating of 80A and a drain to source breakdown voltage of 30V. It has a drain to source resistance of 6.5 milliohms and a power dissipation of 75W. The device is packaged in bulk and is Reach SVHC compliant. Operating temperatures are not specified.
PackageTO-220
Power75W
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Technical Specifications
Rochester Electronics FDP6670AL technical specifications.
General
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 80A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 6.5mR |
| Drain to Source Voltage (Vdss) | 30V |
| Gate to Source Voltage (Vgs) | 20V |
| Packaging | Bulk |
| Power Dissipation | 75W |
| Reach SVHC Compliant | Yes |
Compliance
| RoHS | Not Compliant |
Datasheet
Rochester Electronics FDP6670AL Datasheet
Download the complete datasheet for Rochester Electronics FDP6670AL to view detailed technical specifications.
No datasheet is available for this part.