N-Channel UltraFET® Trench MOSFET, 150V drain-source voltage, 4.9A continuous drain current, and 47mΩ on-resistance. This discrete semiconductor component is designed for efficient power switching applications. Features low on-resistance for reduced power loss. Packaged in bulk for high-volume integration.
Resistance0.047R
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Technical Specifications
Rochester Electronics FDS2572 technical specifications.
General
| Packaging | Bulk |
| Resistance | 0.047R |
Compliance
| RoHS | Not Compliant |
Datasheet
Rochester Electronics FDS2572 Datasheet
Download the complete datasheet for Rochester Electronics FDS2572 to view detailed technical specifications.
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