P-Channel MOSFET, 30V drain-source voltage, 4.6 mOhm on-resistance. Surface mount SOIC-8 package, designed for efficient power switching applications. Bulk packaging for high-volume integration.
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Technical Specifications
Rochester Electronics FDS6681Z technical specifications.
General
| Packaging | Bulk |
Compliance
| RoHS | Not Compliant |
Datasheet
Rochester Electronics FDS6681Z Datasheet
Download the complete datasheet for Rochester Electronics FDS6681Z to view detailed technical specifications.
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