N-channel MOSFET for surface mount applications. Features a 25V drain-to-source breakdown voltage and a continuous drain current of 680mA. This component offers a low drain-to-source on-resistance of 450mΩ at a gate-to-source voltage of 8V. Packaged in a compact SOT-23 case, it has a power dissipation rating of 350mW and is lead-free.
PackageSOT-23
Current Rating680mA
MountingSurface Mount
Power350mW
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Technical Specifications
Rochester Electronics FDV303N technical specifications.
General
| Package/Case | SOT-23 |
| Continuous Drain Current (ID) | 680mA |
| Current Rating | 680mA |
| Drain to Source Breakdown Voltage | 25V |
| Drain to Source Resistance | 450mR |
| Drain to Source Voltage (Vdss) | 25V |
| Gate to Source Voltage (Vgs) | 8V |
| Lead Free | Lead Free |
| Mount | Surface Mount |
| Packaging | Bulk |
| Power Dissipation | 350mW |
| DC Rated Voltage | 25V |
Compliance
| RoHS | Not Compliant |
Datasheet
Rochester Electronics FDV303N Datasheet
Download the complete datasheet for Rochester Electronics FDV303N to view detailed technical specifications.
No datasheet is available for this part.