NPN Silicon Bipolar Junction Transistor (BJT) designed for small signal applications. Features a maximum collector current of 600mA and a collector-emitter voltage rating of 40V. Packaged in a TO-236 (SOT-23) surface-mount package with 3 terminals. Compliant with Halogen Free and RoHS standards.
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Technical Specifications
Rochester Electronics MMBT4401LT1G technical specifications.
General
| Number of Terminals | 3 |
| Terminal Position | DUAL |
| JEDEC Package Code | TO-236 |
| Pin Count | 3 |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Lead Free | Yes |
| REACH | unknown |
| Military Spec | False |
Datasheet
Rochester Electronics MMBT4401LT1G Datasheet
Download the complete datasheet for Rochester Electronics MMBT4401LT1G to view detailed technical specifications.
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