This device is a PNP epitaxial silicon small-signal transistor for general-purpose amplifier and switching applications. It is rated for 150 V collector-emitter voltage, 160 V collector-base voltage, and 600 mA continuous collector current. The datasheet specifies 350 mW total device dissipation, a -55 °C to +150 °C operating and storage junction temperature range, and a 100 MHz to 300 MHz transition frequency at the stated test condition. It is supplied in a SOT-23 3-lead package and Rochester lists the standard tape-and-reel quantity as 3000 pieces.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Rochester Electronics MMBT5401 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Rochester Electronics MMBT5401 technical specifications.
| Number of Terminals | 3 |
| Terminal Position | DUAL |
| Pin Count | 3 |
| Number of Elements | 1 |
| Lead Free | Yes |
| REACH | unknown |
| Military Spec | False |
Download the complete datasheet for Rochester Electronics MMBT5401 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
