The MMBV3401LT1G is a silicon PIN diode with a breakdown voltage of 35V and a maximum power dissipation of 0.2W. It is packaged in a TO-236AB case, a 3-pin package. The diode is made of silicon and has a single element. It is suitable for use in a variety of applications, including RF circuits.
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Technical Specifications
Rochester Electronics MMBV3401LT1G technical specifications.
General
| Number of Terminals | 3 |
| Terminal Position | DUAL |
| JEDEC Package Code | TO-236AB |
| Pin Count | 3 |
| Number of Elements | 1 |
| Diode Element Material | SILICON |
| Diode Type | PIN DIODE |
| Breakdown Voltage-Min | 35 |
| Power Dissipation-Max | 0.2 |
Compliance
| Lead Free | No |
| REACH | unknown |
| Military Spec | False |
Datasheet
Rochester Electronics MMBV3401LT1G Datasheet
Download the complete datasheet for Rochester Electronics MMBV3401LT1G to view detailed technical specifications.
No datasheet is available for this part.