P-channel MOSFET transistor designed for surface mount applications. Features a -30V drain-to-source breakdown voltage and a continuous drain current of 7.5A. Offers a low drain-to-source resistance of 35mR and a maximum power dissipation of 3W. Packaged in a SOT-223 case, this lead-free component is SVHC compliant.
PackageSOT-223
Current Rating-7.3A
Power3W
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Technical Specifications
Rochester Electronics NDT456P technical specifications.
General
| Package/Case | SOT-223 |
| Continuous Drain Current (ID) | 7.5A |
| Current Rating | -7.3A |
| Drain to Source Breakdown Voltage | -30V |
| Drain to Source Resistance | 35mR |
| Drain to Source Voltage (Vdss) | -30V |
| Gate to Source Voltage (Vgs) | 20V |
| Lead Free | Lead Free |
| Packaging | Bulk |
| Power Dissipation | 3W |
| Reach SVHC Compliant | Yes |
| DC Rated Voltage | -30V |
Compliance
| RoHS | Not Compliant |
Datasheet
Rochester Electronics NDT456P Datasheet
Download the complete datasheet for Rochester Electronics NDT456P to view detailed technical specifications.
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