NTD5407NT4G N-channel MOSFET Transistor; 38 A; 40 V; 3-Pin DPAK
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Rochester Electronics NTD5407NT4G technical specifications.
| Continuous Drain Current (ID) | 38A |
| Drain to Source Breakdown Voltage | 40V |
| Drain to Source Resistance | 26mR |
| Drain to Source Voltage (Vdss) | 40V |
| Gate to Source Voltage (Vgs) | 20V |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Power Dissipation | 75W |
| RoHS | Not Compliant |
No datasheet is available for this part.
