N-channel and P-channel MOSFET transistor pair, ideal for power switching applications. Features a continuous drain current of 2.2 A for the N-channel and 2.9 A for the P-channel, with a drain-source voltage rating of 30 V. Packaged in a compact 6-pin TSOP configuration for efficient board space utilization.
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Technical Specifications
Rochester Electronics NTGD4167CT1G technical specifications.
Compliance
| RoHS | Not Compliant |
Datasheet
Rochester Electronics NTGD4167CT1G Datasheet
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