The NTGS3446T1G MOSFET has a continuous drain current rating of 5.1A and a drain to source breakdown voltage of 20V. It can handle a maximum power dissipation of 500mW. The device has a low drain to source resistance of 36mR and a gate to source voltage rating of 12V. The NTGS3446T1G is packaged in bulk and is lead free. It is suitable for use in a variety of applications requiring a high current and low resistance MOSFET.
Resistance0.065R
Current Rating5.1A
Power500mW
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Technical Specifications
Rochester Electronics NTGS3446T1G technical specifications.
General
| Continuous Drain Current (ID) | 5.1A |
| Current Rating | 5.1A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 36mR |
| Drain to Source Voltage (Vdss) | 20V |
| Gate to Source Voltage (Vgs) | 12V |
| Input Capacitance | 750pF |
| Lead Free | Lead Free |
| Packaging | Bulk |
| Power Dissipation | 500mW |
| Resistance | 0.065R |
| DC Rated Voltage | 20V |
Compliance
| RoHS | Compliant |
Datasheet
Rochester Electronics NTGS3446T1G Datasheet
Download the complete datasheet for Rochester Electronics NTGS3446T1G to view detailed technical specifications.
No datasheet is available for this part.