Dual P-Channel MOSFET, 20 V drain-source voltage, 64 mOhm on-resistance, and 1.1 W power dissipation. Surface mount package with Tape and Reel packaging.
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Technical Specifications
Rochester Electronics NTHD4102PT1G technical specifications.
General
| Packaging | Tape and Reel |
Compliance
| RoHS | Compliant |
Datasheet
Rochester Electronics NTHD4102PT1G Datasheet
Download the complete datasheet for Rochester Electronics NTHD4102PT1G to view detailed technical specifications.
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