The NTJS4151PT1G is a SOT-363 packaged N-channel MOSFET with a continuous drain current rating of 4.2A and a current rating of -3.3A. It has a drain to source resistance of 180mR and a drain to source voltage rating of 20V. The gate to source voltage rating is 12V and the power dissipation is 1W. The device is lead free and RoHS compliant, packaged on a tape and reel.
PackageSOT-363
Current Rating-3.3A
Power1W
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Technical Specifications
Rochester Electronics NTJS4151PT1G technical specifications.
General
| Package/Case | SOT-363 |
| Continuous Drain Current (ID) | 4.2A |
| Current Rating | -3.3A |
| Drain to Source Resistance | 180mR |
| Drain to Source Voltage (Vdss) | 20V |
| Gate to Source Voltage (Vgs) | 12V |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Power Dissipation | 1W |
| Reach SVHC Compliant | Yes |
| DC Rated Voltage | -20V |
Compliance
| RoHS | Compliant |
Datasheet
Rochester Electronics NTJS4151PT1G Datasheet
Download the complete datasheet for Rochester Electronics NTJS4151PT1G to view detailed technical specifications.
No datasheet is available for this part.