The NTK3134NT1G MOSFET features a continuous drain current of 890mA and a drain to source breakdown voltage of 20V. It has a drain to source resistance of 200mR and a power dissipation of 310mW. The device is lead free and packaged in tape and reel form. It is compliant with Reach SVHC regulations.
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Rochester Electronics NTK3134NT1G technical specifications.
| Continuous Drain Current (ID) | 890mA |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 200mR |
| Drain to Source Voltage (Vdss) | 20V |
| Gate to Source Voltage (Vgs) | 6V |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Power Dissipation | 310mW |
| Reach SVHC Compliant | Yes |
| RoHS | Not Compliant |
No datasheet is available for this part.