The NTMD3P03R2G is a N-Channel MOSFET with a DC rated voltage of -30V and a continuous drain current of -3.05A. It has a drain to source resistance of 85mR and a power dissipation of 2W. The device is packaged in a lead-free SOIC package and is available on tape and reel.
PackageSOIC
Current Rating-3.05A
Power2W
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Technical Specifications
Rochester Electronics NTMD3P03R2G technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | -3.05A |
| Current Rating | -3.05A |
| Drain to Source Resistance | 85mR |
| Drain to Source Voltage (Vdss) | 30V |
| Gate to Source Voltage (Vgs) | 20V |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Power Dissipation | 2W |
| DC Rated Voltage | -30V |
Compliance
| RoHS | Not Compliant |
Datasheet
Rochester Electronics NTMD3P03R2G Datasheet
Download the complete datasheet for Rochester Electronics NTMD3P03R2G to view detailed technical specifications.
No datasheet is available for this part.