NTMD6N02R2G Dual N-channel MOSFET Transistor; 6.5 A; 20 V; 8-Pin SOIC
Rochester Electronics NTMD6N02R2G technical specifications.
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 6.5A |
| Current Rating | 6A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 35mR |
| Drain to Source Voltage (Vdss) | 20V |
| Gate to Source Voltage (Vgs) | 12V |
| Lead Free | Lead Free |
| Packaging | Bulk |
| Power Dissipation | 1.22W |
| DC Rated Voltage | 20V |
| RoHS | Compliant |
No datasheet is available for this part.
