P-channel enhancement mode MOSFET in a SOT-23 package. Features a power dissipation of 730 mW. Ideal for discrete semiconductor applications. Available in bulk packaging.
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Technical Specifications
Rochester Electronics NTR4101PT1G technical specifications.
General
| Packaging | Bulk |
Compliance
| RoHS | Compliant |
Datasheet
Rochester Electronics NTR4101PT1G Datasheet
Download the complete datasheet for Rochester Electronics NTR4101PT1G to view detailed technical specifications.
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