N-channel silicon MOSFET, 30V drain-source voltage, 3200mA continuous drain current. Features a 3-terminal, TO-236AB (SOT-23) package with dual terminal positioning. This small signal MOSFET is designed for general-purpose switching and amplification applications.
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Technical Specifications
Rochester Electronics NTR4170NT1G technical specifications.
General
| Number of Terminals | 3 |
| Terminal Position | DUAL |
| JEDEC Package Code | TO-236AB |
| Pin Count | 3 |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Lead Free | Yes |
| REACH | unknown |
| Military Spec | False |
Datasheet
Rochester Electronics NTR4170NT1G Datasheet
Download the complete datasheet for Rochester Electronics NTR4170NT1G to view detailed technical specifications.
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