N-channel MOSFET, SOT-323 package, offering a continuous drain current of 1.4A and a drain-to-source voltage (Vdss) of -8V. Features a low drain-to-source resistance of 117mR and a maximum power dissipation of 290mW. Designed for small signal applications with a gate-to-source voltage (Vgs) of 8V. This lead-free component is supplied in bulk packaging and is REACH SVHC compliant.
PackageSOT-323
Current Rating-1.4A
Power290mW
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Technical Specifications
Rochester Electronics NTS2101PT1G technical specifications.
General
| Package/Case | SOT-323 |
| Continuous Drain Current (ID) | 1.4A |
| Current Rating | -1.4A |
| Drain to Source Resistance | 117mR |
| Drain to Source Voltage (Vdss) | -8V |
| Gate to Source Voltage (Vgs) | 8V |
| Lead Free | Lead Free |
| Packaging | Bulk |
| Power Dissipation | 290mW |
| Reach SVHC Compliant | Yes |
| DC Rated Voltage | -8V |
Compliance
| RoHS | Compliant |
Datasheet
Rochester Electronics NTS2101PT1G Datasheet
Download the complete datasheet for Rochester Electronics NTS2101PT1G to view detailed technical specifications.
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