The NTS4101PT1G is a MOSFET with a continuous drain current of 1.37A and a drain to source voltage of -20V. It has a drain to source resistance of 120mR and a power dissipation of 329mW. The device is packaged in bulk and is lead free. It is compliant with Reach SVHC regulations. The MOSFET is suitable for use in a variety of applications where a high current and low resistance are required.
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Rochester Electronics NTS4101PT1G technical specifications.
| Continuous Drain Current (ID) | 1.37A |
| Current Rating | -1.37A |
| Drain to Source Resistance | 120mR |
| Drain to Source Voltage (Vdss) | -20V |
| Gate to Source Voltage (Vgs) | 8V |
| Lead Free | Lead Free |
| Packaging | Bulk |
| Power Dissipation | 329mW |
| Reach SVHC Compliant | Yes |
| DC Rated Voltage | -20V |
| RoHS | Compliant |
No datasheet is available for this part.
