Dual P-Channel MOSFET, designed for small signal applications. Features a continuous drain current of -430mA and a drain-to-source voltage of -20V. Offers a low on-resistance of 900mΩ at a gate-to-source voltage of 6V. Includes integrated ESD protection for enhanced reliability. Power dissipation is rated at 250mW, and it is supplied in tape and reel packaging.
Rochester Electronics NTZD3152PT1G technical specifications.
| Continuous Drain Current (ID) | 430mA |
| Current Rating | -430mA |
| Drain to Source Resistance | 1R |
| Drain to Source Voltage (Vdss) | -20V |
| Gate to Source Voltage (Vgs) | 6V |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Power Dissipation | 250mW |
| DC Rated Voltage | -20V |
| RoHS | Not Compliant |
No datasheet is available for this part.
