Dual P-Channel MOSFET, designed for small signal applications. Features a continuous drain current of -430mA and a drain-to-source voltage of -20V. Offers a low on-resistance of 900mΩ at a gate-to-source voltage of 6V. Includes integrated ESD protection for enhanced reliability. Power dissipation is rated at 250mW, and it is supplied in tape and reel packaging.
Current Rating-430mA
Power250mW
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Technical Specifications
Rochester Electronics NTZD3152PT1G technical specifications.
General
| Continuous Drain Current (ID) | 430mA |
| Current Rating | -430mA |
| Drain to Source Resistance | 1R |
| Drain to Source Voltage (Vdss) | -20V |
| Gate to Source Voltage (Vgs) | 6V |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Power Dissipation | 250mW |
| DC Rated Voltage | -20V |
Compliance
| RoHS | Not Compliant |
Datasheet
Rochester Electronics NTZD3152PT1G Datasheet
Download the complete datasheet for Rochester Electronics NTZD3152PT1G to view detailed technical specifications.
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