The RS1G201ATTB1 is a high-power P-channel MOSFET from ROHM Semiconductor designed for load switching applications. It features a very low on-resistance of 4.2mΩ (typical) and is housed in a compact surface-mount HSOP8 package. It is lead-free and fully RoHS compliant, suitable for standard grade industrial and consumer electronics.
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Technical Specifications
ROHM SEMICONDUCTOR RS1G201ATTB1 technical specifications.
General
| Drain-Source Voltage (Vdss) | -40V |
| Continuous Drain Current (Id) @ Tc=25°C | -78A |
| Continuous Drain Current (Id) @ Ta=25°C | -20A |
| Drain-Source On-Resistance (Rds(on)) @ Vgs=-10V (Max) | 5.2mΩ |
| Gate-Source Voltage (Vgss) | ±20V |
| Gate Threshold Voltage (Vgs(th)) | -1.0 to -2.5V |
| Power Dissipation (Pd) @ Tc=25°C | 40W |
| Total Gate Charge (Qg) (Typ) | 62nC |
| Operating Junction and Storage Temperature | -55 to 150°C |
Compliance
| RoHS | Compliant |
| REACH | Compliant |
| Pb-free | Yes |
Datasheet
ROHM SEMICONDUCTOR RS1G201ATTB1 Datasheet
Download the complete datasheet for ROHM SEMICONDUCTOR RS1G201ATTB1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.