PNP Silicon Bipolar Junction Transistor for small signal applications. Features a 400V collector-emitter breakdown voltage and a continuous collector current of -2A. Offers a maximum power dissipation of 1W and operates within a temperature range of -55°C to 150°C. Surface mountable in a TO-252-3 (SC-63) package with 3 pins. Includes a minimum hFE of 82 and a transition frequency of 18MHz.
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| Package/Case | TO-252-3 |
| Collector Base Voltage (VCBO) | -30V |
| Collector Emitter Breakdown Voltage | 400V |
| Collector Emitter Saturation Voltage | 350mV |
| Collector-emitter Voltage-Max | 500mV |
| Contact Plating | Copper, Tin |
| Continuous Collector Current | -2A |
| Current Rating | -1A |
| Emitter Base Voltage (VEBO) | -6V |
| Gain Bandwidth Product | 120MHz |
| hFE Min | 82 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 400V |
| Max Collector Current | 2A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| RoHS Compliant | Yes |
| Transition Frequency | 18MHz |
| DC Rated Voltage | -600V |
| RoHS | Compliant |
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