PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 12V Collector-Emitter Breakdown Voltage (VCEO) and a maximum collector current of 500mA. Offers a minimum DC current gain (hFE) of 270 and a transition frequency of 260MHz. Packaged in a SOT-723 surface-mount case, this RoHS compliant component operates from -55°C to 150°C with a maximum power dissipation of 150mW.
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| Package/Case | SOT-723 |
| Collector Base Voltage (VCBO) | 15V |
| Collector Emitter Breakdown Voltage | 12V |
| Collector Emitter Saturation Voltage | -100V |
| Collector Emitter Voltage (VCEO) | 12V |
| Collector-emitter Voltage-Max | 250mV |
| Contact Plating | Copper, Tin |
| Current Rating | -500mA |
| Emitter Base Voltage (VEBO) | -6V |
| Frequency | 260MHz |
| Gain Bandwidth Product | 260MHz |
| hFE Min | 270 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 12V |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 150mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 260MHz |
| DC Rated Voltage | -12V |
| RoHS | Compliant |
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