PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 60V collector-emitter breakdown voltage and a continuous collector current of -1A. Offers a minimum DC current gain (hFE) of 120 and a transition frequency of 300MHz. Packaged in a TSMT3 (TO-236-3) surface-mount package with 3 pins. Operates within a temperature range of -55°C to 150°C and is RoHS compliant.
PackageTO-236-3
Current Rating-1A
MountingSurface Mount
PolarityPNP
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Technical Specifications
Rohm 2SA2092TLQ technical specifications.
General
| Package/Case | TO-236-3 |
| Collector Base Voltage (VCBO) | -60V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | -200mV |
| Collector-emitter Voltage-Max | 500mV |
| Contact Plating | Copper, Tin, Silver |
| Continuous Collector Current | -1A |
| Current Rating | -1A |
| Emitter Base Voltage (VEBO) | -6V |
| Gain Bandwidth Product | 300MHz |
| hFE Min | 120 |
| Lead Free | Lead Free |
| Max Collector Current | 1A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 300MHz |
| DC Rated Voltage | -60V |
Compliance
| RoHS | Compliant |
Datasheet
Rohm 2SA2092TLQ Datasheet
Download the complete datasheet for Rohm 2SA2092TLQ to view detailed technical specifications.
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