The 2SB1181TLP is a PNP transistor with a collector-emitter breakdown voltage of 80V and a maximum collector current of 1A. It has a gain bandwidth product of 100MHz and is rated for operation up to 150°C. The transistor is packaged in a TO-252-3 surface mount package and is lead free.
Sign in to ask questions about the Rohm 2SB1181TLP datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Rohm 2SB1181TLP technical specifications.
| Package/Case | TO-252-3 |
| Collector Base Voltage (VCBO) | -80V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector-emitter Voltage-Max | 400mV |
| Contact Plating | Copper, Tin |
| Continuous Collector Current | -1A |
| Current Rating | -1A |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 100MHz |
| hFE Min | 82 |
| Lead Free | Lead Free |
| Max Collector Current | 1A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Transition Frequency | 100MHz |
| DC Rated Voltage | -80V |
| RoHS | Compliant |
Download the complete datasheet for Rohm 2SB1181TLP to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
