PNP bipolar junction transistor in a TO-252-3 (SC-63) surface mount package. Features a maximum collector-emitter voltage (VCEO) of 80V, continuous collector current of -1A, and a maximum power dissipation of 10W. Offers a minimum DC current gain (hFE) of 120 and a transition frequency of 100MHz. Operates within a temperature range of -55°C to 150°C.
Sign in to ask questions about the Rohm 2SB1181TLQ datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Rohm 2SB1181TLQ technical specifications.
| Package/Case | TO-252-3 |
| Collector Base Voltage (VCBO) | -80V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | -400mV |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector-emitter Voltage-Max | 400mV |
| Contact Plating | Copper, Tin |
| Continuous Collector Current | -1A |
| Current Rating | -1A |
| Emitter Base Voltage (VEBO) | -5V |
| Gain Bandwidth Product | 100MHz |
| hFE Min | 120 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 80V |
| Max Collector Current | 1A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 10W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 1W |
| Reach SVHC Compliant | No |
| Termination | SMD/SMT |
| Transition Frequency | 100MHz |
| DC Rated Voltage | -80V |
| RoHS | Compliant |
Download the complete datasheet for Rohm 2SB1181TLQ to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
